0.32% additional power yield benefited from square mono wafer.

Competitive high-temperature performance with ameliorated temperature coefficient.

Minimized power loss in cell connection.

Higher power generation and better performance under shading effect with multi-busbar and half-cell technology.

Optimized electrical design lowers hot spot risk and operating current.

Minimized risk of microcrack by using industry-leading cutless cell processing technology.

Excellent anti-PID resistance by Nitrous Oxide passivation processing technology.